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Table 4 Mechanical constants and parameters used for diffusion simulations

From: Statistical analysis of the interaction between irradiation-induced defects and triple junctions

Property

Symbol

Value

Unit

Reference

Young’s modulus

E

200

GPa

–

Poisson’s ratio

\(\nu \)

0.3

–

–

Burger’s vector

b

0.24855

nm

–

Gas constant

R

8.314

J (mol K)\(^{-1}\)

–

Absolute temperature

T

500

K

–

Boltzmann constant

\(k_b\)

\(8.617333\times 10^{-5}\)

eV K\(^{-1}\)

–

Atomic volume

\(V_m\)

\(7.092329\times 10^{-6}\)

m\(^3\) mol\(^{-1}\)

–

Defect implantation rate

\(f_\text {implantation}\)

\(10^{-3}\)

dpa s\(^{-1}\)

–

CCE (SIA)

\(\eta _I\)

0.484783

–

–

CCE (vacancy)

\(\eta _V\)

\(-\,0.193050\)

–

–

Diffusion rate constant (SIA)

\(D_I^{(0)}\)

\(8.2369 \times 10^{-7}\)

m\(^2\) s\(^{-1}\)

[39]

Diffusion rate constant (vacancy)

\(D_V^{(0)}\)

\(8.2369 \times 10^{-8}\)

m\(^2\) s\(^{-1}\)

[39]

Migration energy (size 1 SIA)

\(E_m^{(I1)}\)

0.34

eV

[39]

Migration energy (size 2 SIA)

\(E_m^{(I2)}\)

0.42

eV

[39]

Migration energy (size 3 SIA)

\(E_m^{(I3)}\)

0.43

eV

[39]

Migration energy (size 1 vacancy)

\(E_m^{(V1)}\)

0.67

eV

[39]

Migration energy (size 2 vacancy)

\(E_m^{(V2)}\)

0.62

eV

[39]

Migration energy (size 3 vacancy)

\(E_m^{(V3)}\)

0.35

eV

[39]

Migration energy (size 4 vacancy)

\(E_m^{(V4)}\)

0.48

eV

[39]

Binding energy (size 2 vacancy)

\(E_b^{(V2)}\)

0.30

eV

[39]

Binding energy (size 3 vacancy)

\(E_b^{(V3)}\)

0.37

eV

[39]

Binding energy (size 4 vacancy)

\(E_b^{(V4)}\)

0.62

eV

[39]

Binding energy (size 2 SIA)

\(E_b^{(I2)}\)

0.80

eV

[39]

Binding energy (size 3 SIA)

\(E_b^{(I3)}\)

0.92

eV

[39]

Annihilation coefficient

\(Z_{ann}^{(0)}\)

20

–

–