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Table 4 Mechanical constants and parameters used for diffusion simulations

From: Statistical analysis of the interaction between irradiation-induced defects and triple junctions

PropertySymbolValueUnitReference
Young’s modulusE200GPa
Poisson’s ratio\(\nu \)0.3
Burger’s vectorb0.24855nm
Gas constantR8.314J (mol K)\(^{-1}\)
Absolute temperatureT500K
Boltzmann constant\(k_b\)\(8.617333\times 10^{-5}\)eV K\(^{-1}\)
Atomic volume\(V_m\)\(7.092329\times 10^{-6}\)m\(^3\) mol\(^{-1}\)
Defect implantation rate\(f_\text {implantation}\)\(10^{-3}\)dpa s\(^{-1}\)
CCE (SIA)\(\eta _I\)0.484783
CCE (vacancy)\(\eta _V\)\(-\,0.193050\)
Diffusion rate constant (SIA)\(D_I^{(0)}\)\(8.2369 \times 10^{-7}\)m\(^2\) s\(^{-1}\)[39]
Diffusion rate constant (vacancy)\(D_V^{(0)}\)\(8.2369 \times 10^{-8}\)m\(^2\) s\(^{-1}\)[39]
Migration energy (size 1 SIA)\(E_m^{(I1)}\)0.34eV[39]
Migration energy (size 2 SIA)\(E_m^{(I2)}\)0.42eV[39]
Migration energy (size 3 SIA)\(E_m^{(I3)}\)0.43eV[39]
Migration energy (size 1 vacancy)\(E_m^{(V1)}\)0.67eV[39]
Migration energy (size 2 vacancy)\(E_m^{(V2)}\)0.62eV[39]
Migration energy (size 3 vacancy)\(E_m^{(V3)}\)0.35eV[39]
Migration energy (size 4 vacancy)\(E_m^{(V4)}\)0.48eV[39]
Binding energy (size 2 vacancy)\(E_b^{(V2)}\)0.30eV[39]
Binding energy (size 3 vacancy)\(E_b^{(V3)}\)0.37eV[39]
Binding energy (size 4 vacancy)\(E_b^{(V4)}\)0.62eV[39]
Binding energy (size 2 SIA)\(E_b^{(I2)}\)0.80eV[39]
Binding energy (size 3 SIA)\(E_b^{(I3)}\)0.92eV[39]
Annihilation coefficient\(Z_{ann}^{(0)}\)20